View 10-PZ06NBA041FS-P915L68Y_8632321.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

10-PZ06NBA041FS-P915L68Y preliminary datasheet flowboost0 600v/41m ? high efficiency symmetric boost ultra fast switching with mosfet and sic diodes low inductance layout tandem to npc and mnpc modules neutral point solar inverters solar inverters ups 10-PZ06NBA041FS-P915L68Y tj=25c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 1600 v t h =80c 42 t c =80c 57 t h =80c 49 t c =80c 75 maximum junction temperature t j max 150 c input boost mosfet v ds 600 v t h =80c 32 t c =80c 39 t h =80c 97 t c =80c 147 t j max 150 c i d drain to source breakdown voltage dc drain current maximum junction temperature gate-source peak voltage i dpulse p tot power dissipation per diode bypass diode pulsed drain current forward current per diode surge forward current a w a a t p limited by t j max 272 v w t j =t j max 20 t j =t j max a types i2t-value maximum ratings i fav a 2 s i fsm condition dc current 370 flow0 12mm housing target applications schematic t p =10ms 370 t j =25c t j =150c i 2 t t j =t j max features power dissipation p tot v gs 1 revi sion: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition input boost diode t h =80c 20 t c =80c 24 t h =80c 41 t c =80c 63 thermal properties insulation properties v is t=2s dc voltage 4000 v min 12,7 mm min 12,7 mm 600 114 150 clearance insulation voltage creepage distance t op operation temperature under switching condition c storage temperature t stg -40?+125 c -40?+(tjmax - 25) v a c a t j =t j max w t j max p tot power dissipation maximum junction temperature i f repetitive peak forward current v rrm peak repetitive reverse voltage dc forward current i frm t j =t j max t j =25c t p limited by t j max 2 revisi on: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max t j =25c 0,8 1,14 1,3 t j =125c 1,09 t j =25c 0,92 t j =125c 0,81 t j =25c 0,006 t j =125c 0,008 t j =25c 0,1 t j =125c thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,42 k/w t j =25c 0,04 t j =125c 0,08 t j =25c 2,4 3 3,6 t j =125c t j =25c 100 t j =125c t j =25c 5 t j =125c t j =25c 33 t j =125c 30 t j =25c 9 t j =125c 10 t j =25c 290 t j =125c 317 t j =25c 14 t j =125c 5 t j =25c 0,13 t j =125c 0,14 t j =25c 0,06 t j =125c 0,07 tj=25c 0,9 1,50 1,9 t j =125c 1,76 t j =25c 100 t j =125c t j =25c 8 t j =125c 7 t j =25c 9 t j =125c 10 t j =25c 0,11 t j =125c 0,14 t j =25c 0,03 t j =125c 0,04 di ( rec ) max t j =25c 2512 /d t t j =125c 1984 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,69 k/w r 25 tol. 5% tj=25c 20,9 22 23,1 k ? r 100 1486 ? * see details on thermistor charts on figure 2. 0,72 tj=25c tj=25c tj=25c 290 36 150 0,00296 v (gs)th 600 na v pf ns a/ s mws a c v mws tj=25c tj=25c nc a ns ? thermistor 360 6530 1600 rated resistance* b-value b (25/100) tol. 3% power dissipation p mw 200 k 15 10/0 10/0 reverse recovery time reverse recovered energy reverse leakage current peak recovery current peak rate of fall of recovery current reverse recovery charge gate threshold voltage gate to source leakage current 44 480 zero gate voltage drain current t d(off) turn on delay time fall time static drain to source on resistance c iss 100 15 0 10/0 400 10/0 tbd. 44,4 reverse current i r v v ? ma 35 35 35 characteristic values forward voltage threshold voltage (for power loss calc. only) slope resistance (for power loss calc. only) v f v to r t bypass diode tj=25c rgon=8 ? c oss rise time turn off delay time q g e off total gate charge t r turn-off energy loss per pulse input capacitance rgon=8 ? q gd value conditions rgoff=8 ? vgs=vds t rr input boost mosfet reverse transfer capacitance gate to source charge turn-on energy loss per pulse output capacitance gate to drain charge input boost diode forward voltage e rec q rr i rrm i rm thermal resistance chip to heatsink per chip r thjh v f f=1mhz c rss r ds(on) e on q gs t f i dss t d(on) i gss 0 0 10 20 rgon=8 ? 400 15 3950 a 400 thermal grease thickness 50um = 1 w/mk k/w 3 revision : 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet figure 1 boost mosfet figure 2 boost mosfet typical output characteristics typical output characteristics i d = f(v ds ) i d = f(v ds ) at at t p = 250 s t p = 250 s t j = 25 c t j = 125 c v ds from 3 v to 13 v in steps of 1 v v ds from 3 v to 13 v in steps of 1 v figure 3 boost mosfet figure 4 boost fwd typical transfer characteristics typical diode forward current as i d = f(v ds ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ds = 10 v input boost 0 10 20 30 40 50 012345 v f (v) i f (a) t j = 25c t j = t jmax -25c 0 10 20 30 40 50 60 70 80 90 100 012345678 v ce (v) i c (a) 0 10 20 30 40 50 60 70 80 90 100 012345678 v ce (v) i c (a) 0 4 8 12 16 20 0123456 v gs (v) i d (a) t j = 25c t j = t jmax -25c 4 revis ion: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet figure 5 boost mosfet figure 6 boost mosfet typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i d ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ds = 400 v v ds = 400 v v gs = +10/0 v v gs = +10/0 v r gon = 8 ? i d = 15 a r goff = 8 ? figure 7 boost mosfet figure 8 boost mosfet typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector (drain) current as a function of gate resistor e rec = f(i c )e rec = f(r g ) with an inductive load at with an inductive load at t j = 25/125 c t j = 25/125 c v ds = 400 v v ds = 400 v v gs = +10/0 v v gs = +10/0 v r gon = 8 ? i d = 15 a r goff = 8 ? input boost e rec high t e rec low t 0 0,01 0,02 0,03 0,04 0,05 0 5 10 15 20 25 30 i c (a) e (mws) e rec high t e rec low t 0 0,01 0,02 0,03 0,04 0 8 16 24 32 40 r g ( ) e (mws) e off high t e on high t e on low t e off low t 0,0 0,1 0,2 0,3 0,4 0 5 10 15 20 25 30 i c (a) e (mws) e off high t e on high t e on low t e off low t 0,0 0,1 0,2 0,3 0,4 0 8 16 24 32 40 r g ( ) e (mws) 5 revis ion: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet figure 9 boost mosfet figure 10 boost mosfet typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i d ) t = f(r g ) with an inductive load at with an inductive load at t j = 125 c t j = 125 c v ds = 400 v v ds = 400 v v gs = +10/0 v v gs = +10/0 v r gon = 8 ? i c = 15 a r goff = 8 ? figure 11 boost fwd figure 12 boost fwd typical reverse recovery time as a typical reverse recovery time as a function of collector current function of mosfet turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ds = 400 v v r = 400 v v gs = +10/0 v i f = 15 a r gon = 8 ? v gs = +10/0 v input boost t doff t don t r 0,001 0,01 0,1 1 0 5 10 15 20 25 30 i d (a) t ( s) t doff t don t r 0,001 0,01 0,1 1 0 8 16 24 32 40 r g ( ) t ( s) t rr high t t rr low t 0 0,004 0,008 0,012 0,016 0,02 0 8 16 24 32 40 r gon ( ) t rr ( s) t rr high t t rr low t 0 0,003 0,006 0,009 0,012 0,015 0 5 10 15 20 25 30 i c (a) t rr ( s) 6 revis ion: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet figure 13 boost fwd figure 14 boost fwd typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of mosfet turn on gate resistor q rr = f(i c )q rr = f(r gon ) at at at t j = 25/125 c tj = 25/125 c v ds = 400 v v r =400 v v gs = +10/0 v i f =15 a r gon = 8 ? v gs =+10/0v figure 15 boost fwd figure 16 boost fwd typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(i c )i rrm = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ds = 400 v v r = 400 v v gs = +10/0 v i f = 15 a r gon = 8 ? v gs = +10/0 v input boost i rrm high t i rrm low t 0 3 6 9 12 15 18 21 0 8 16 24 32 40 r gon ( ) i rrm (a) q rr high t q rr low t 0 0,03 0,06 0,09 0,12 0,15 0 8 16 24 32 40 r gon ( ) q rr ( c) i rrm high t i rrm low t 0 2 4 6 8 10 0 5 10 15 20 25 30 i c (a) i rrm (a) q rr high t q rr low t 0 0,04 0,08 0,12 0,16 0,2 0 5 10 15 20 25 30 i c (a) q rr ( c) 7 revisi on: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet figure 17 boost fwd figure 18 boost fwd typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di 0 /dt,di rec /dt = f(ic) di 0 /dt,di rec /dt = f(r gon ) at at t j = 25/125 c t j = 25/125 c v ce = 400 v v r =400 v v ge = +10/0 v i f =15 a r gon = 8 ? v gs =+10/0v figure 19 boost mosfet figure 20 boost fwd mosfet transient thermal impedance fwd transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(t p )z thjh = f(t p ) at at d = t p / t d = t p / t r thjh = 0,72 k/w mosfet thermal model values r thjh = 1,69 k/w fwd thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,019 8,77e+00 0,05 5,64e+00 0,106 1,31e+00 0,17 6,62e-01 0,352 2,19e-01 0,59 1,18e-01 0,164 6,50e-02 0,47 2,15e-02 0,049 1,06e-02 0,33 3,58e-03 0,031 7,41e-04 0,07 5,72e-04 input boost di rec /dt low t di 0 /dt high t 0 1000 2000 3000 4000 5000 6000 7000 8000 0 8 16 24 32 40 r gon ( ) di rec / dt (a/ s) di rec /dt high t di 0 /dt low t t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di 0 /dt high t di rec /dt high t di rec /dt low t di 0 /dt low t 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 i c (a) di rec / dt (a/ s) di 0 /dt di rec /dt di 0 /dt di rec /dt 8 revis ion: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet figure 21 boost mosfet figure 22 boost mosfet power dissipation as a collector/drain current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 150 oc t j = 150 oc v gs = 10 v figure 23 boost fwd figure 24 boost fwd power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 150 oc t j = 150 oc input boost 0 50 100 150 200 250 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 0 50 100 150 200 th ( o c) i c (a) 0 20 40 60 80 100 0 50 100 150 200 t h ( o c) p tot (w) 0 8 16 24 32 0 50 100 150 200 t h ( o c) i f (a) 9 revisi on: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet figure 25 boo st mosfet figure 26 boost mosfet safe operating area as a function gate voltage vs gate charge of drain-source voltage i d = f(v ds )v gs = f(qg) at at d = single pulse i d = 15 a t h = 80 oc v gs = +10/0 v t j =t jmax oc input boost v ds (v) i d (a) 10 3 10 0 10 0 10 1 10 2 10 3 100us 1m s 10m s 100m s dc 10 2 10 1 0 1 2 3 4 5 6 7 8 0 50 100 150 200 250 qg (nc) u gs (v) 120v 480v 10 revision: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet figure 1 bypass diode figure 2 bypass diode typical diode forward current as diode transient thermal impedance a function of forward voltage as a function of pulse width i f = f(v f )z thjh = f(t p ) at at t p = 250 sd = t p / t r thjh = 1,42 k/w figure 3 bypass diode figure 4 bypass diode power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 150 oc t j = 150 oc bypass diode 0 20 40 60 80 100 00,511,52 v f (v) i f (a) t j = 25c t j = t jmax -25c t p (s) z thjc (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 0 20 40 60 80 100 120 0 50 100 150 200 t h ( o c) p tot (w) 0 10 20 30 40 50 60 70 80 0 50 100 150 200 t h ( o c) i f (a) 11 revis ion: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet figure 1 thermistor figure 2 thermistor typical ntc characteristic typical ntc resistance values as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 22000 24000 25 50 75 100 125 t (c) r/ ? [] ?= ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? 25 100 / 25 11 25 )( tt b ertr 12 revis ion: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet t j 125 c r g on 8 ? r goff 8 ? figure 1 boost mosfet figure 2 boost mosfet turn-off switching waveforms & definition of t dof f , t eof f turn-on switching waveforms & definition of t don , t eon (t eof f = integrating time for e of f )( t eon = integrating time for e on ) v ge (0%) = 0v v ge (0%) = 0v v ge (100%) = 10 v v ge (100%) = 10 v v c (100%) = 400 v v c (100%) = 400 v i c (100%) = 15 a i c (100%) = 15 a t doff = 0,32 s t don = 0,03 s t eoff = 0,33 s t eon = 0,09 s figure 3 boost mosfet figure 4 boost mosfet turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 400 v v c (100%) = 400 v i c (100%) = 15 a i c (100%) = 15 a t f = 0,0050 s t r = 0,01 s switching definitions boost mosfet general conditions = = = i c 1% v ce 90% v ge 90% -20 0 20 40 60 80 100 120 -0,1 0 0,1 0,2 0,3 0,4 0,5 time (us) % t doff t eoff v ce i c v ge i c10% v ge10% t don v ce 3% -25 0 25 50 75 100 125 150 2,8 2,9 3 3,1 3,2 3,3 time(us) % i c v ce t eon v ge fitted i c10% i c 90% i c 60% i c 40% -20 0 20 40 60 80 100 120 0,3 0,325 0,35 0,375 0,4 time (us) % v ce i c t f i c10% i c90% -25 0 25 50 75 100 125 150 2,99 3,01 3,03 3,05 3,07 3,09 time(us) % t r v ce i c 13 revis ion: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet figure 5 boost mosfet figure 6 boost mosfet turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 6,01 kw p on (100%) = 6,01 kw e off (100%) = 0,07 mj e on (100%) = 0,14 mj t eoff = 0,33 s t eon = 0,09 s figure 7 boost mosfet figure 8 boost fwd gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t rr v geoff = 0v v d (100%) = 400 v v geon = 10 v i d (100%) = 15 a v c (100%) = 400 v i rrm (100%) = -7 a i c (100%) = 15 a t rr = 0,01 s q g = 200,78 nc switching definitions boost mosfet i c 1% v ge90% -20 0 20 40 60 80 100 120 -0,1 0 0,1 0,2 0,3 0,4 0,5 time (us) % p of f e off t eoff v ce3% v ge10% -25 0 25 50 75 100 125 150 2,92 2,96 3 3,04 3,08 3,12 3,16 time(us) % p on e on t eon -5 0 5 10 15 -50 0 50 100 150 200 250 q g (nc) v ge (v) i rrm 10% i rrm 90% i rrm 100% t rr -125 -100 -75 -50 -25 0 25 50 75 100 125 3,01 3,03 3,05 3,07 3,09 time(us) % i d v d fitted 14 revis ion: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet figure 9 boost fwd figure 10 boost fwd turn-on switching waveforms & definition of t qrr turn-on switching waveforms & definition of t erec (t qrr = integrating time for q rr )( t erec = integrating time for e rec ) i d (100%) = 15 a p rec (100%) = 6,01 kw q rr (100%) = 0,14 c e rec (100%) = 0,04 mj t qrr = 0,02 s t erec = 0,02 s switching definitions boost mosfet t qrr -50 0 50 100 150 200 2,95 3 3,05 3,1 3,15 time(us) % i d q r r -25 0 25 50 75 100 125 150 3 3,025 3,05 3,075 3,1 time(us) % p rec e rec t erec 15 revis ion: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet version ordering code in datamatrix as in packaging barcode as standard in flow0 12mm housing 10-PZ06NBA041FS-P915L68Y p915-l68y p915-l68y outline pinout ordering code & marking ordering code and marking - outline - pinout 16 revi sion: 1 copyright by vincotech
10-PZ06NBA041FS-P915L68Y preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. target product status datasheet status definition this datasheet contains the design specifications for product development. specificat ions may change in any manner without notice. the data contained is exclusively intended for technically trained staff. the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the applic ation or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) su pport or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 17 revisi on: 1 copyright by vincotech

▲Up To Search▲

Price & Availability of 10-PZ06NBA041FS-P915L68Y

	To Download 10-PZ06NBA041FS-P915L68Y Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .